| PART |
Description |
Maker |
| AUIRFS3107TRR |
195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
|
| OARS-1 |
RESISTOR, CURRENT SENSE, 2 W, 1; 2; 5 %, 20 ppm, 0.003 ohm - 0.05 ohm, SURFACE MOUNT
|
Welwyn Components, Ltd.
|
| FRS130H FRS130R FRS130D FN3219 |
12A/ 100V/ 0.195 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
|
Intersil Corporation
|
| BUK962R8-30B |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| MUX08FQ |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) SGL ENDED MULTIPLEXER, CDIP16
|
Analog Devices, Inc.
|
| MMFT65R195P MMFT65R195PTH |
650V 0.195(ohm) N-channel MOSFET
|
MagnaChip Semiconductor...
|
| MMFT60R195P MMFT60R195PTH |
600V 0.195(ohm) N-channel MOSFET
|
MagnaChip Semiconductor...
|
| 11AK30 |
11AK30A4 003/AV
|
ETC
|
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| CT0805CSF-3N0M |
1 ELEMENT, 0.003 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
CENTRAL TECHNOLOGIES
|
| IRK196-04 IRK196-08 IRK196-12 IRK196-14 IRK196-16 |
Power Module 195 Amp
|
TRANSYS Electronics Limited
|
